Open AccessDeep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3
Author(s) -
Hemant Ghadi,
Joe F. McGlone,
Evan M. Cornuelle,
Zixuan Feng,
Yuxuan Zhang,
Lingyu Meng,
Hongping Zhao,
Aaron R. Arehart,
Steven A. Ringel
Publication year - 2022
Publication title -
apl materials
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/5.0101829
Subject(s) - chemical vapor deposition , materials science , analytical chemistry (journal) , deep level transient spectroscopy , gallium , impurity , doping , metalorganic vapour phase epitaxy , deposition (geology) , schottky diode , diode , optoelectronics , nanotechnology , chemistry , silicon , metallurgy , epitaxy , paleontology , organic chemistry , chromatography , layer (electronics) , sediment , biology
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