Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubits
Author(s) -
Yujia Liu,
KevinP. Gradwohl,
Chen-Hsun Lu,
T. Remmele,
Y. Yamamoto,
Marvin Hartwig Zoellner,
Thomas Schroeder,
Torsten Boeck,
Houari Amari,
Carsten Richter,
M. Albrecht
Publication year - 2022
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0101753
Subject(s) - heterojunction , materials science , condensed matter physics , dislocation , transmission electron microscopy , quantum well , optoelectronics , qubit , stack (abstract data type) , superlattice , layer (electronics) , quantum , nanotechnology , optics , composite material , physics , computer science , laser , quantum mechanics , programming language
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom