A model for spectroscopic ellipsometry analysis of plasma-activated Si surfaces for direct wafer bonding
Author(s) -
N. Rauch,
E. Andersen,
Ignacio Gabriel Vicente-Gabás,
Jiri Duchoslav,
Alexey Minenkov,
Jacek Gąsiorowski,
Christoph Flötgen,
Kurt Hingerl,
Heiko Groiß
Publication year - 2022
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0101633
Subject(s) - ellipsometry , amorphous solid , wafer , materials science , x ray photoelectron spectroscopy , analytical chemistry (journal) , transmission electron microscopy , oxide , layer (electronics) , refractive index , thin film , chemistry , crystallography , optoelectronics , nanotechnology , chemical engineering , chromatography , engineering , metallurgy
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