Open AccessControl of the Schottky barrier height in monolayer WS2 FETs using molecular doping
Author(s) -
Siyuan Zhang,
HsunJen Chuang,
Son T. Le,
Curt A. Richter,
Kathleen M. McCreary,
Berend T. Jonker,
Angela R. Hight Walker,
Christina A. Hacker
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0101033
Subject(s) - doping , materials science , dopant , schottky barrier , monolayer , optoelectronics , electron mobility , semiconductor , field effect transistor , charge carrier , nanotechnology , transistor , condensed matter physics , voltage , electrical engineering , engineering , diode , physics
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