Open AccessDirect barrier evaluation method for SiC devices with junction barrier Schottky structures demonstrated with quasi-continuous spacing variation
Author(s) -
Hu Long,
Na Ren,
Kuang Sheng
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0100828
Subject(s) - schottky barrier , materials science , schottky diode , silicon carbide , saturation current , optoelectronics , diode , linearity , electronic engineering , engineering , electrical engineering , composite material , voltage
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