Open AccessLow contact resistivity of metal/n-GaN by the reduction of gap states with an epitaxially grown GaOx insulating layer
Author(s) -
Jiro Koba,
Junichi Koike
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0100250
Subject(s) - materials science , doping , work function , optoelectronics , electrical resistivity and conductivity , epitaxy , schottky barrier , layer (electronics) , metal , schottky diode , wide bandgap semiconductor , silicon , condensed matter physics , nanotechnology , metallurgy , electrical engineering , diode , engineering , physics
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