Open AccessElectrophysical properties and morphology of nanostructured porous Ge obtained by method of ion implantation
Author(s) -
N. M. Suleı̆manov,
V. D. Bazarov,
N. D. Platonov
Publication year - 2022
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/5.0099539
Subject(s) - materials science , ion implantation , ion , porosity , scanning electron microscope , sputter deposition , irradiation , sputtering , dielectric , chemical engineering , crystal (programming language) , nanotechnology , optoelectronics , analytical chemistry (journal) , composite material , thin film , chemistry , physics , organic chemistry , chromatography , computer science , nuclear physics , engineering , programming language
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