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Integrated sub-micron vacuum gaps in semiconductor devices
Author(s) -
Peter Oles,
A. Breymesser,
Oliver Blank,
P. Hadley
Publication year - 2022
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0097043
Subject(s) - semiconductor , materials science , optoelectronics , capacitor , semiconductor device , quantum tunnelling , silicon , dielectric , field electron emission , electric field , intrinsic semiconductor , breakdown voltage , dielectric strength , voltage , electron , nanotechnology , electrical engineering , physics , layer (electronics) , quantum mechanics , engineering

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