Effect of amorphous ternary AlBN passivations on the performance of AlGaN/GaN HEMTs
Author(s) -
Jiantao Cheng,
Fengfeng Liu,
Chunping Jiang,
Wenqing Zhu
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0096290
Subject(s) - passivation , materials science , optoelectronics , amorphous solid , transconductance , ternary operation , dielectric , layer (electronics) , transistor , nanotechnology , electrical engineering , voltage , crystallography , programming language , computer science , chemistry , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom