Open AccessSchottky-to-Ohmic switching in ferroelectric memristors based on semiconducting Hf0.93Y0.07O2 thin films
Author(s) -
Moritz L. Müller,
Maximilian T. Becker,
Nives Strkalj,
Judith L. MacManusDriscoll
Publication year - 2022
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0095762
Subject(s) - ferroelectricity , materials science , ohmic contact , optoelectronics , memristor , doping , schottky diode , thin film , schottky barrier , quantum tunnelling , neuromorphic engineering , non volatile memory , nanotechnology , electrical engineering , layer (electronics) , computer science , dielectric , engineering , diode , machine learning , artificial neural network
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