Open AccessThe effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC
Author(s) -
Shangting Jiang,
Ye Li,
Zhiyong Chen,
Weihua Zhu,
Qinmao Wu,
Hongyu He,
Xinlin Wang
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0095061
Subject(s) - vacancy defect , materials science , band gap , electronic band structure , electronic structure , silicon , crystallographic defect , electron , condensed matter physics , molecular physics , atomic physics , chemistry , optoelectronics , physics , quantum mechanics
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