Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) | Zendy

Takashi Onaya | Zendy; Toshihide Nabatame | Zendy; Mari Inoue | Zendy; Tomomi Sawada | Zendy; Hiroyuki Ota | Zendy; Yukinori Morita | Zendy

Open Access

Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C)

Author(s) -

Takashi Onaya,

Toshihide Nabatame,

Mari Inoue,

Tomomi Sawada,

Hiroyuki Ota,

Yukinori Morita

Publication year - 2022

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/5.0091661

Subject(s) - materials science , ferroelectricity , tin , amorphous solid , orthorhombic crystal system , nucleation , crystallite , crystallinity , crystallization , annealing (glass) , capacitor , dielectric , analytical chemistry (journal) , optoelectronics , composite material , crystallography , crystal structure , chemical engineering , metallurgy , chemistry , organic chemistry , voltage , engineering , physics , quantum mechanics , chromatography

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