Effect of uniaxial compressive stress with different orientations on the hole mobility of wurtzite GaN heterojunction quantum well
Author(s) -
Yaqun Liu,
Xiyue Li,
Everett Wang,
Gary Zhang,
Jing Wang
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0089826
Subject(s) - condensed matter physics , wurtzite crystal structure , materials science , effective mass (spring–mass system) , phonon , quantum well , electron mobility , compressive strength , heterojunction , scattering , optics , physics , composite material , laser , quantum mechanics , zinc , metallurgy
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