Open AccessRestored passivation after complete removal of front poly-Si between the grid in poly-Si/SiO2 front/back cells
Author(s) -
David L. Young,
Kejun Chen,
William Nemeth,
Vincenzo La Salvia,
San Theingi,
Matthew Page,
Pauls Stradins
Publication year - 2022
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/5.0089756
Subject(s) - passivation , front (military) , materials science , grid , front and back ends , optoelectronics , computer science , nanotechnology , mechanical engineering , operating system , engineering , geology , geodesy , layer (electronics)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom