On retrograde phosphorus concentration depth profiles in silicon after POCl3 diffusion and thermal oxidation
Author(s) -
Jörg Horzel,
Sebastian Mack,
Marius Meßmer,
Stefan Schmidt,
Susanne Richter,
Andreas Wolf,
Jonas Schön,
J. Rentsch
Publication year - 2022
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/5.0089692
Subject(s) - silicon , diffusion , materials science , thermal , phosphorus , optoelectronics , nuclear engineering , thermodynamics , metallurgy , physics , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom