Formation and elimination of electrically active thermally- induced defects in float-zone-grown silicon crystals
Author(s) -
Joyce Ann T. De Guzman,
В. П. Маркевич,
Jack Mullins,
Nicholas E. Grant,
John D. Murphy,
Daniel Hiller,
Matthew P. Halsall,
А. R. Peaker
Publication year - 2022
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/5.0089287
Subject(s) - materials science , silicon , annealing (glass) , deep level transient spectroscopy , impurity , doping , carrier lifetime , optoelectronics , analytical chemistry (journal) , composite material , chemistry , organic chemistry , chromatography
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom