Open AccessNondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach
Author(s) -
Sami A. El Hageali,
Harvey Guthrey,
Steve Johnston,
Jake Soto,
Bruce Odekirk,
Brian P. Gorman,
Mowafak AlJassim
Publication year - 2022
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0088313
Subject(s) - cathodoluminescence , materials science , luminescence , photoluminescence , epitaxy , optoelectronics , dislocation , stacking , wide bandgap semiconductor , microstructure , crystallographic defect , semiconductor , heterojunction , condensed matter physics , nanotechnology , composite material , chemistry , physics , organic chemistry , layer (electronics)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom