Open AccessDX center formation in highly Si doped AlN nanowires revealed by trap assisted space-charge limited current
Author(s) -
Rémy Vermeersch,
Gwénolé Jacopin,
B. Daudin,
Julien Pernot
Publication year - 2022
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0087789
Subject(s) - doping , space charge , materials science , ohmic contact , trapping , silicon , nanowire , condensed matter physics , molecular beam epitaxy , atomic physics , electron , optoelectronics , molecular physics , nanotechnology , epitaxy , chemistry , physics , ecology , layer (electronics) , quantum mechanics , biology
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