Open AccessEpitaxial growth of β-Ga2O3 by hot-wall MOCVD
Author(s) -
D. Gogova,
Misagh Ghezellou,
Dat Q. Tran,
Steffen Richter,
Alexis Papamichail,
Jawad UlHassan,
Axel R. Persson,
Per O. Å. Persson,
Olof Kordina,
Bo Monemar,
Matthew Hilfiker,
M. Schubert,
T. Paskova,
Vanya Darakchieva
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0087571
Subject(s) - metalorganic vapour phase epitaxy , epitaxy , materials science , chemical vapor deposition , sapphire , cathodoluminescence , optoelectronics , substrate (aquarium) , dislocation , transmission electron microscopy , crystallography , analytical chemistry (journal) , optics , nanotechnology , chemistry , composite material , layer (electronics) , luminescence , laser , oceanography , physics , chromatography , geology
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