Open AccessDetection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods
Author(s) -
Arnar M. Vidarsson,
Jordan R. Nicholls,
Daniel Haasmann,
Sima Dimitrijev,
E.Ö. Sveinbjörnsson
Publication year - 2022
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0086974
Subject(s) - materials science , capacitor , deep level transient spectroscopy , optoelectronics , capacitance , dielectric , transistor , semiconductor , wide bandgap semiconductor , oxide , conductance , silicon carbide , analytical chemistry (journal) , silicon , condensed matter physics , voltage , electrical engineering , chemistry , composite material , metallurgy , physics , electrode , chromatography , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom