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Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowires
Author(s) -
M. Hanke,
Carsten Richter,
F. F. Lange,
Anna Reis,
Julia E. Parker,
Torsten Boeck
Publication year - 2022
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0085788
Subject(s) - materials science , nucleation , nanowire , synchrotron , microscopy , lattice (music) , diffraction , crystallography , lattice constant , condensed matter physics , synchrotron radiation , x ray crystallography , twist , germanium , x ray , optics , nanotechnology , geometry , optoelectronics , silicon , chemistry , physics , organic chemistry , acoustics , mathematics
We have spatially investigated lattice spacing, twist, and bending in individual laterally (110)-oriented Ge nanowires (NWs) on pre-patterned Si(001) substrates. A combination of synchrotron-based scanning x-ray diffraction microscopy with an x-ray focus size of 50 nm and numerical finite element calculations on the elastic strain reveals a three-dimensional relaxation scenario, which becomes particularly complex next to NW nucleation points. Despite a lattice mismatch of 4.2%, lattice compliance is preserved, since strain can effectively be released close to the seeding window. Areas in the NWs other than that appear fully relaxed. The resulting NW twist, i.e., lattice rotations around the growth axis, amounts to less than 0.1°.

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