English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We have spatially investigated lattice spacing, twist, and bending in individual laterally (110)-oriented Ge nanowires (NWs) on pre-patterned Si(001) substrates. A combination of synchrotron-based scanning x-ray diffraction microscopy with an x-ray focus size of 50 nm and numerical finite element calculations on the elastic strain reveals a three-dimensional relaxation scenario, which becomes particularly complex next to NW nucleation points. Despite a lattice mismatch of 4.2%, lattice compliance is preserved, since strain can effectively be released close to the seeding window. Areas in the NWs other than that appear fully relaxed. The resulting NW twist, i.e., lattice rotations around the growth axis, amounts to less than 0.1°.

Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowires