Open AccessDielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation
Author(s) -
Jack Strand,
Paolo La Torraca,
Andrea Padovani,
Luca Larcher,
Alexander L. Shluger
Publication year - 2022
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0083189
Subject(s) - materials science , dielectric , dielectric strength , oxide , chemical physics , time dependent gate oxide breakdown , amorphous solid , quantum tunnelling , percolation (cognitive psychology) , condensed matter physics , nanotechnology , gate oxide , optoelectronics , chemistry , transistor , electrical engineering , physics , voltage , organic chemistry , neuroscience , metallurgy , biology , engineering
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