Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p–n junctions | Zendy

Jialin Wang | Zendy; Jiaxun Song | Zendy; Ling Qin | Zendy; Yingchun Peng | Zendy; R. Nötzel | Zendy

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Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p–n junctions

Author(s) -

Jialin Wang,

Jiaxun Song,

Ling Qin,

Yingchun Peng,

R. Nötzel

Publication year - 2022

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/5.0082509

Subject(s) - responsivity , photodetector , photocurrent , materials science , nanowire , optoelectronics , wide bandgap semiconductor , visible spectrum , photoconductivity , core (optical fiber) , electric field , physics , composite material , quantum mechanics

n-InGaN/p-Cu 2 O core-shell nanowire (NW) p–n junctions enable efficient self-powered photoelectrochemical photodetectors (PEC PDs) in the visible. The photocurrent density under one-sun illumination is enhanced by 8 times compared to that of bare InGaN NW PEC PDs due to maximized photocarrier separation in the built-in electric field of the p–n junction. The responsivity reaches 173 μA/W under one-sun illumination. The response times of 30–40 ms are among the shortest achieved for PEC PDs. Together with the long-time stability and reusability, a robust, easy to fabricate, and easy to operate self-powered PEC PD is introduced.

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