Open AccessEffects of total ionizing dose on transient ionizing radiation upset sensitivity of 40–180 nm SRAMs
Author(s) -
Junlin Li,
Wei Chen,
Ruibin Li,
Guizhen Wang,
Chao Qi,
Yan Liu,
Xiaoming Jin,
Xiaoyan Bai,
Chenhui Wang
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0081576
Subject(s) - upset , ionizing radiation , irradiation , static random access memory , absorbed dose , radiation , sensitivity (control systems) , single event upset , materials science , gamma ray , optoelectronics , physics , electrical engineering , electronic engineering , optics , engineering , nuclear physics , mechanical engineering
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