Open AccessNear-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability
Author(s) -
Stephen J. Moxim,
Fedor V. Sharov,
David Russell Hughart,
Gaddi S. Haase,
Colin G. McKay,
Elias B. Frantz,
Patrick M. Lenhan
Publication year - 2022
Publication title -
review of scientific instruments
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.605
H-Index - 165
eISSN - 1089-7623
pISSN - 0034-6748
DOI - 10.1063/5.0080960
Subject(s) - materials science , dangling bond , semiconductor , atomic units , electron , magnetoresistance , reliability (semiconductor) , dipole , oxide , metallic bonding , transistor , field effect transistor , condensed matter physics , optoelectronics , magnetic field , silicon , metal , physics , power (physics) , voltage , quantum mechanics , metallurgy
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