Open AccessA cost-effective technology to improve power performance of nanoribbons GaN HEMTs
Author(s) -
A. Soltani,
B. Benbakhti,
Jean-Claude Gerbedoen,
Abdelkrim Khediri,
Hassan Maher,
JeanPaul Salvestrini,
A. Ougazzaden,
N. Bourzgui,
Hassan Ali Barkad
Publication year - 2022
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0080240
Subject(s) - materials science , high electron mobility transistor , transconductance , optoelectronics , heterojunction , transistor , wide bandgap semiconductor , gallium nitride , layer (electronics) , voltage , electrical engineering , nanotechnology , engineering
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