Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy
Author(s) -
G. NareshKumar,
P. R. Edwards,
Tim Batten,
M. Nouf-Allehiani,
Arantxa VilaltaClemente,
A.J. Wilkinson,
Emmanuel Le Boulbar,
Philip A. Shields,
Bohdan Starosta,
B. Hourahine,
Robert Martin,
C. TragerCowan
Publication year - 2022
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0080024
Subject(s) - cathodoluminescence , raman spectroscopy , materials science , microscopy , confocal , electron backscatter diffraction , scanning electron microscope , optics , electron microscope , correlative , dislocation , optoelectronics , optical microscope , diffraction , luminescence , physics , composite material , linguistics , philosophy
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