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Effects of carbon impurities on the performance of silicon as an anode material for lithium ion batteries: An ab initio study
Author(s) -
Stéphane B. Olou’ou Guifo,
Jonathan E. Mueller,
David Henriques,
Torsten Markus
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0079945
Subject(s) - silicon , materials science , lithium (medication) , anode , chemical physics , carbon fibers , impurity , vacancy defect , diffusion , electrolyte , chemical engineering , electrode , chemistry , crystallography , composite material , optoelectronics , organic chemistry , thermodynamics , medicine , physics , engineering , composite number , endocrinology
Silicon is widely used in the semiconductor industry and has recently become very attractive as a lithium ion battery anode due to its high capacity. However, volume changes associated with repeated lithiation–delithiation cycles expose fresh silicon surfaces to the electrolyte, causing irreversible side reactions. Moreover, silicon suffers from a poor electronic conductivity at a low lithium content. Carbon impurities originating at synthesis or resulting from subsequent contact with other electrode components are often neglected. However, atomistic simulations reveal that dissolved carbon decreases the local potential energy surface by drawing the electron density from silicon to form polar covalent C–Si bonds that are stronger than the non-polar covalent Si–Si bonds they replace. This leads to a higher density and elastic stiffness, regardless of the interstitial lithium concentration. Substitutional carbon also reduces the mobility of silicon self-vacancies and interstitial lithium by increasing their diffusion barriers by 24.7 and 27.3 kJ mol −1 , respectively. Moreover, the [carbon, silicon vacancy] complex is basically stable, while the [carbon, lithium] complex is found to become stable against both single defects at a spacing of 4.72 Å. The minimum energy paths ultimately demonstrate that both the interstitialcy and dissociative mechanisms are mainly responsible for carbon diffusion in silicon.

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