Low-energy O+ ion beam induced chemical vapor deposition using hexamethyldisilane or hexamethyldisilazane for silicon dioxide film formation | Zendy

Satoru Yoshimura | Zendy; Satoshi Sugimoto | Zendy; Takae Takeuchi | Zendy; Masato Kiuchi | Zendy

Open Access

Low-energy O+ ion beam induced chemical vapor deposition using hexamethyldisilane or hexamethyldisilazane for silicon dioxide film formation

Author(s) -

Satoru Yoshimura,

Satoshi Sugimoto,

Takae Takeuchi,

Masato Kiuchi

Publication year - 2021

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/5.0077660

Subject(s) - x ray photoelectron spectroscopy , substrate (aquarium) , silicon , silicon dioxide , chemical vapor deposition , ion beam , fourier transform infrared spectroscopy , analytical chemistry (journal) , thin film , materials science , ion , deposition (geology) , ion beam assisted deposition , carbon film , ion beam deposition , chemistry , chemical engineering , optoelectronics , nanotechnology , organic chemistry , composite material , paleontology , sediment , biology , oceanography , engineering , geology

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