Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer | Zendy

Joyce Ann T. De Guzman | Zendy; В. П. Маркевич | Zendy; I.D. Hawkins | Zendy; J. Coutinho | Zendy; Hussein M. Ayedh | Zendy; Jeff Binns | Zendy; N. V. Abrosimov | Zendy; Stanislau B. Lastovskii | Zendy; Iain F. Crowe | Zendy; Matthew P. Halsall | Zendy; А. R. Peaker | Zendy

Open Access

Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer

Author(s) -

Joyce Ann T. De Guzman,

В. П. Маркевич,

I.D. Hawkins,

J. Coutinho,

Hussein M. Ayedh,

Jeff Binns,

N. V. Abrosimov,

Stanislau B. Lastovskii,

Iain F. Crowe,

Matthew P. Halsall,

А. R. Peaker

Publication year - 2021

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/5.0076980

Subject(s) - silicon , gallium , acceptor , indium , deep level transient spectroscopy , boron , dopant , materials science , oxygen , impurity , doping , vacancy defect , analytical chemistry (journal) , chemistry , crystallography , optoelectronics , metallurgy , condensed matter physics , physics , organic chemistry , chromatography

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