Open AccessImprovement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium
Author(s) -
Masataka Imura,
Hideki Inaba,
Takaaki Mano,
Nobuyuki Ishida,
Fumihiko Uesugi,
Yoko Kuroda,
Yoshiko Nakayama,
Masaki Takeguchi,
Yasuo Koide
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0076706
Subject(s) - trimethylgallium , metalorganic vapour phase epitaxy , annealing (glass) , materials science , epitaxy , sapphire , full width at half maximum , chemical vapor deposition , optoelectronics , analytical chemistry (journal) , crystallography , optics , chemistry , nanotechnology , layer (electronics) , metallurgy , laser , physics , chromatography
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