Theoretical investigation of nitrogen-vacancy defects in silicon
Author(s) -
M. S. Potsidi,
Navaratnarajah Kuganathan,
StavrosRichard G. Christopoulos,
N. V. Sarlis,
A. Chroneos,
C. A. Londos
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0075799
Subject(s) - vacancy defect , silicon , dipole , atom (system on chip) , materials science , density functional theory , nitrogen , doping , atomic physics , molecular physics , condensed matter physics , computational chemistry , chemistry , optoelectronics , physics , organic chemistry , computer science , embedded system
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom