Open AccessShallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy
Author(s) -
Rémy Vermeersch,
Éric Robin,
A. Cros,
Gwénolé Jacopin,
B. Daudin,
Julien Pernot
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0074454
Subject(s) - molecular beam epitaxy , ohmic contact , nanowire , doping , materials science , optoelectronics , shallow donor , diode , depletion region , fermi level , space charge , silicon , epitaxy , semiconductor , nanotechnology , layer (electronics) , physics , quantum mechanics , electron
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