Open AccessEffect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy
Author(s) -
Keito Aoshima,
Masahiro Horita,
Jun Suda
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0073747
Subject(s) - deep level transient spectroscopy , schottky barrier , schottky diode , leakage (economics) , diode , materials science , time constant , transient (computer programming) , optoelectronics , spectroscopy , molecular physics , chemistry , analytical chemistry (journal) , silicon , physics , electrical engineering , chromatography , quantum mechanics , computer science , economics , macroeconomics , engineering , operating system
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom