Open AccessImpact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers
Author(s) -
Anna Mogilatenko,
Sebastian Walde,
Sylvia Hagedorn,
Carsten Netzel,
ChiaYen Huang,
M. Weyers
Publication year - 2022
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0073076
Subject(s) - metalorganic vapour phase epitaxy , materials science , dislocation , sapphire , doping , epitaxy , nucleation , optoelectronics , layer (electronics) , composite material , optics , chemistry , laser , physics , organic chemistry
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