Open AccessEffects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices
Author(s) -
Yanxu Zhu,
Jianwei Li,
Qixuan Li,
Xiaomeng Song,
Zhangyang Tan,
Jinheng Li
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0070957
Subject(s) - ohmic contact , materials science , high electron mobility transistor , optoelectronics , surface roughness , electrode , etching (microfabrication) , groove (engineering) , annealing (glass) , contact resistance , surface finish , transistor , wide bandgap semiconductor , electrical resistivity and conductivity , composite material , layer (electronics) , metallurgy , electrical engineering , chemistry , voltage , engineering
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