Size effect of the Ge2Sb2Te5 cell atop the silicon nitride O-ring resonator on the attenuation coefficient | Zendy

Petr Lazarenko | Zendy; Vadim Kovalyuk | Zendy; P An | Zendy; A. I. Prokhodtsov | Zendy; Alexander Golikov | Zendy; Aleksey Sherchenkov | Zendy; S. A. Kozyukhin | Zendy; Ilia M. Fradkin | Zendy; G. Chulkova | Zendy; Gregory Goltsman | Zendy

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Size effect of the Ge2Sb2Te5 cell atop the silicon nitride O-ring resonator on the attenuation coefficient

Author(s) -

Petr Lazarenko,

Vadim Kovalyuk,

P An,

A. I. Prokhodtsov,

Alexander Golikov,

Aleksey Sherchenkov,

S. A. Kozyukhin,

Ilia M. Fradkin,

G. Chulkova,

Gregory Goltsman

Publication year - 2021

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/5.0066387

Subject(s) - materials science , attenuation coefficient , scattering , attenuation , resonator , optoelectronics , absorption (acoustics) , amorphous solid , silicon nitride , silicon , nitride , reflection (computer programming) , transmission coefficient , optics , transmission (telecommunications) , crystallography , nanotechnology , layer (electronics) , chemistry , composite material , programming language , physics , computer science , electrical engineering , engineering

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