Open AccessEpitaxial type-I and type-II InAs-AlAsSb core–shell nanowires on silicon
Author(s) -
Fabio Giudice,
Sergej Fust,
Paul Schmiedeke,
Johannes Pantle,
Markus Döblinger,
Akhil Ajay,
Steffen Meder,
Hubert Riedl,
Jonathan J. Finley,
Gregor Koblmüller
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0065867
Subject(s) - materials science , optoelectronics , nanowire , band offset , silicon , epitaxy , photoluminescence , heterojunction , photonics , band gap , semiconductor , direct and indirect band gaps , gallium arsenide , nanotechnology , valence band , layer (electronics)
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