Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors
Author(s) -
DaeYoung Jeon,
Yumin Koh,
ChuYoung Cho,
Kyungho Park
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0064823
Subject(s) - materials science , optoelectronics , transistor , equivalent series resistance , scattering , wide bandgap semiconductor , electron mobility , thermal resistance , degradation (telecommunications) , surface roughness , high electron mobility transistor , thermal , electrical engineering , voltage , composite material , optics , physics , meteorology , engineering
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