Open AccessTemperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates
Author(s) -
Yaopeng Zhao,
Chong Wang,
Xuefeng Zheng,
Yunlong He,
Xiaohua Ma,
Kai Liu,
Ang Li,
Yue Hao
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0064695
Subject(s) - high electron mobility transistor , transconductance , materials science , dielectric , optoelectronics , conductance , transistor , analytical chemistry (journal) , electrical engineering , condensed matter physics , chemistry , physics , voltage , chromatography , engineering
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