Open AccessInvestigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations
Author(s) -
Mohamed Bouslama,
P. Vigneshwara Raja,
F. Gaillard,
Raphaël Sommet,
Jean-Christophe Nallatamby
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0064493
Subject(s) - high electron mobility transistor , trapping , materials science , optoelectronics , transistor , doping , acceptor , characterization (materials science) , electron , condensed matter physics , voltage , nanotechnology , physics , ecology , biology , quantum mechanics
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