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In this study, we present a thermochromic solar absorber coating that reaches a high thermal emittance change by using a thin, optically switching VO x  film located on an infrared transparent interlayer (spacer) of Si or Ge with an optical thickness of λ/4 (for λ = 7 μm). Using this so-called “lambda/4-concept,” temperature-dependent reflection measurements in the spectral range between 2500 and 50 000 nm from an absorber with a 450 nm Si spacer and a VO x  film oxidized from a 30-nm-thick V display an overall increase in emittance from ε(25 °C) = 12.2% to ε(150 °C) = 55.1%, resulting in a change of Δε = 42.9%. In addition, using an absorber with a 400 nm Ge spacer in combination with a VO x  film oxidized from 17.5-nm-thick V, an increase in emittance from ε(25 °C) = 8.2% to ε(150 °C) = 49.2% with a change of Δε = 41.0% was achieved. In addition, the optical properties of Ge and Si thin films over a wide spectral range of 250–38 000 nm were determined using spectroscopic ellipsometry. Using this optical data and a simple optical model of the VO x  film, reflectance simulations could be performed by using the ellipsometry analysis software WVASE © . It was shown by x-ray diffraction measurements that the optically switching VO x  films oxidized from V in a belt furnace consist of the VO 2  and the V 2 O 5  phases. Using scanning electron microscopy images, the surface morphology of optically switching VO x  films was compared with over-oxidized VO x  films. A correlation between the surface morphology and the crystalline phases was revealed and applied to search for the optimal furnace parameters. This method could significantly reduce the time cost to achieve optically switching VO x  coatings using an oxidation process.

Realization of a cost-effective thermochromic solar absorber with a high emittance change based on VO2 and an infrared transparent intermediate layer