GaN-based power devices: Physics, reliability, and perspectives
Author(s) -
Matteo Meneghini,
Carlo De Santi,
Idriss Abid,
Matteo Buffolo,
Marcello Cioni,
Riyaz Abdul Khadar,
Luca Nela,
Nicolò Zagni,
Alessandro Chini,
Farid Medjdoub,
Gaudenzio Meneghesso,
G. Verzellesi,
Enrico Zai,
Elison Matioli
Publication year - 2021
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0061354
Subject(s) - materials science , gallium nitride , optoelectronics , miniaturization , power semiconductor device , wide bandgap semiconductor , fabrication , engineering physics , transistor , reliability (semiconductor) , voltage , nanotechnology , electrical engineering , power (physics) , physics , engineering , medicine , alternative medicine , layer (electronics) , pathology , quantum mechanics
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