Open AccessImpact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches
Author(s) -
Jianfeng Wang,
Kelsey F. Jorgensen,
Esmat Farzana,
Kai Shek Qwah,
Morteza Monavarian,
Zachary J. Biegler,
Tom Mates,
James S. Speck
Publication year - 2021
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/5.0060154
Subject(s) - molecular beam epitaxy , materials science , doping , optoelectronics , sapphire , substrate (aquarium) , growth rate , epitaxy , plasma , analytical chemistry (journal) , nanotechnology , optics , layer (electronics) , laser , chemistry , oceanography , physics , geometry , mathematics , quantum mechanics , chromatography , geology
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