Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties
Author(s) -
P. John,
Mohamed Al Khalfioui,
C. Deparis,
A. Welk,
Céline Lichtensteiger,
Romain Bachelet,
Guillaume SaintGirons,
H. Rotella,
Maxime Hugues,
Marius Grundmann,
J. Zúñiga–Pérez
Publication year - 2021
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0057307
Subject(s) - materials science , molecular beam epitaxy , band gap , thin film , epitaxy , diffraction , electron diffraction , optoelectronics , electron mobility , hall effect , analytical chemistry (journal) , optics , chemistry , electrical resistivity and conductivity , nanotechnology , physics , electrical engineering , engineering , layer (electronics) , chromatography
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