Open AccessRealization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy
Author(s) -
Max Kneiß,
Daniel Splith,
Peter Schlupp,
Anna Hassa,
Holger von Wenckstern,
Michael Lorenz,
Marius Grundmann
Publication year - 2021
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0056630
Subject(s) - ohmic contact , schottky barrier , diode , rectification , optoelectronics , heterojunction , materials science , schottky diode , layer (electronics) , voltage , nanotechnology , electrical engineering , engineering
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