Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method | Zendy

AI Assistant Blog Pricing

Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

Details

The content you want is available to Zendy users.Already have an account? Click here. to sign in.