Open AccessSimulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method
Author(s) -
Y. H. Yang,
Zhaojun Lin,
Mingyan Wang,
Heng Zhou,
Yang Liu,
Guangyuan Jiang
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0056337
Subject(s) - transconductance , linearity , materials science , optoelectronics , heterojunction , monte carlo method , scattering , transistor , field effect transistor , wide bandgap semiconductor , optics , physics , voltage , statistics , mathematics , quantum mechanics
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