Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization
Author(s) -
David Cooper,
Victor Fan Arcara,
B. Damilano,
Lynda Amichi,
Amaury Mavel,
N. Rochat,
G. Feuillet,
Aimeric Courville,
S. Vézian,
JeanYves Duboz
Publication year - 2021
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0054810
Subject(s) - electron holography , materials science , light emitting diode , dopant , diode , optoelectronics , metalorganic vapour phase epitaxy , electron , doping , optics , nanotechnology , physics , transmission electron microscopy , epitaxy , layer (electronics) , quantum mechanics
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