Open AccessStrong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures
Author(s) -
Joseph Casamento,
Hyunjea Lee,
Celesta S. Chang,
M.F. Besser,
Takuya Maeda,
David A. Muller,
Huili Grace Xing,
Debdeep Jena
Publication year - 2021
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/5.0054522
Subject(s) - materials science , epitaxy , heterojunction , impurity , scandium , doping , optoelectronics , nitride , analytical chemistry (journal) , nanotechnology , metallurgy , chemistry , organic chemistry , layer (electronics) , chromatography
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