Open AccessIn-plane Schottky-barrier field-effect transistors with a 4-nm channel based on 1T/2H MoTe2 and WTe2
Author(s) -
Houping Yang,
Yueyue Tian,
Junjun Li,
Yiqun Xie,
Wei Ren,
Yin Wang
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0054348
Subject(s) - schottky barrier , heterojunction , transistor , optoelectronics , materials science , field effect transistor , monolayer , nanotechnology , condensed matter physics , fabrication , silicon , electrical engineering , voltage , physics , diode , engineering , medicine , alternative medicine , pathology
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